HYB3164165AT Datasheet, PDF (3/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Pin Configuration
P-TSOPII-50 (400 mil)
O
VCC
1
I/O1
2
I/O2
3
I/O3
4
I/O4
5
VCC
6
I/O5
7
I/O6
8
I/O7
9
I/O8
10
N.C.
11
VCC
12
WE
1.3
RAS
14
N.C.
15
N.C.
16
N.C.
17
N.C.
18
A0
19
A1
20
A2
21
A3
22
A4
23
A5
24
VCC
25
50
VSS
49
I/O16
48
I/O15
47
I/O14
46
I/O13
45
VSS
44
I/O12
43
I/O11
42
I/O10
41
I/O9
40
N.C.
39
VSS
38
L. CAS
37
UCAS
36
OE
35
N.C.
34
N.C.
33
A12/N.C. *
32
A11/N.C.**
31
A10
30
A9
29
A8
28
A7
27
A6
26
VSS
* Pin 33 is A12 for HYB 3164165AT(L) and N.C. for HYB 3165(6)165AT(L)
** Pin 32 is A11 for HYB 3164(5)165AT(L) and N.C. for HYB 3166165AT(L)
Pin Names
A0-A12
A0-A11
A0-A10
RAS
OE
I/O1-I/O16
UCAS, LCAS
WE
Vcc
Vss
Address Inputs for 8k-refresh version HYB 3164165T(L)
Address Inputs for 4k-refresh version HYB 3165165T(L)
Address Inputs for 2k-refresh version HYB 3166165T(L)
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply ( + 3.3V)
Ground
Semiconductor Group
3