HYB3164165AT Datasheet, PDF (4/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
TRUTH TABLE
FUNCTION
RAS LCAS UCAS WE
Standby
Read:Word
Read:Lower Byte
H H-X H-X X
LL
H
H
LL
H
H
Read:Upper Byte
LH
L
H
Write:Word
L
(Early-Write)
Write:Lower Byte
L
(Early-Write)
Write:Upper Byte
L
(Early Write)
Read-Modify-
L
Write
Hyper Page Mode 1st L
Read (Word)
Cycle
L
L
L
H
H
L
L
L
H-L H-L
Hyper Page Mode 2nd L
Read (Word)
Cycle
H-L H-L
Hyper Page Mode 1st L
Early Write(Word) Cycle
H-L H-L
Hyper Page Mode 2nd L
Early Write(Word) Cycle
H-L H-L
Hyper Page Mode 1st L
RMW
Cycle
H-L H-L
Hyper Page Mode 2st L
RMW
Cycle
H-L H-L
RAS only refresh
CAS-before-RAS
refresh
Test Mode Entry
Hidden Refresh
(Read)
Hidden Refresh
(Write)
Self Refresh
(L-version only)
LH
H
H-L L
L
H-L L
L
L-H- L
L
L
L-H- L
L
L
H-L L
H
L
L
L
H-L
H
H
L
L
H-L
H-L
X
H
L
H
L
X
OE ROW COL I/O1-
ADD ADD I/O16
XX
X
High Impedance
L ROW COL Data Out
L ROW COL Lower Byte:Data Out
Upper-Byte:High-Z
L ROW COL Lower Byte:High-Z
Upper Byte:Data Out
X ROW COL Data In
X ROW COL Lower Byte:Data Out
Upper-Byte:High-Z
X ROW COL Lower Byte:High-Z
Upper Byte:Data Out
L - H ROW COL Data Out, Data In
L ROW COL Data Out
L n/a COL Data Out
X ROW COL Data In
X n/a COL Data In
L - H ROW COL Data Out, Data In
L - H n/a COL Data Out, Data In
X ROW n/a High Impedance
XX
n/a High Impedance
XX
n/a High Impedance
L ROW COL Data Out
X ROW COL Data In
XX
X
High Impedance
Semiconductor Group
4