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HYB314175BJ-50- Datasheet, PDF (9/24 Pages) Siemens Semiconductor Group – 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min max min max min max
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode read/write cycle tPRWC 58 – 58 – 68 – ns
time
CAS precharge to WE delay time tCPWD 41 – 41 – 49 – ns
CAS before RAS Refresh Cycle
CAS setup time
tCSR
CAS hold time
tCHR
RAS to CAS precharge time
tRPC
Write to RAS precharge time
tWRP
Write to RAS hold time
tWRH
5 – 5 – 5 – ns
10 – 10 – 10 – ns
5 – 5 – 5 – ns
10 – 10 – 10 – ns
10 – 10 – 10 – ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
tCPT
35 – 35 – 40 – ns
Self Refresh Cycle (L-Version only)
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100 – 100 – 100 – µs
95 – 110 – 110 – ns
– 50 – – 50 – – 50 – ns
Semiconductor Group
9