HYB314175BJ-50- Datasheet, PDF (9/24 Pages) Siemens Semiconductor Group – 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min max min max min max
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode read/write cycle t_PRWC 58 – 58 – 68 – ns
time
CAS precharge to WE delay time t_CPWD 41 – 41 – 49 – ns
CAS before RAS Refresh Cycle
CAS setup time
t_CSR
CAS hold time
t_CHR
RAS to CAS precharge time
t_RPC
Write to RAS precharge time
t_WRP
Write to RAS hold time
t_WRH
5 – 5 – 5 – ns
10 – 10 – 10 – ns
5 – 5 – 5 – ns
10 – 10 – 10 – ns
10 – 10 – 10 – ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t_CPT
35 – 35 – 40 – ns
Self Refresh Cycle (L-Version only)
RAS pulse width
RAS precharge time
CAS hold time
t_RASS
t_RPS
t_CHS
100 – 100 – 100 – µs
95 – 110 – 110 – ns
– 50 – – 50 – – 50 – ns
Semiconductor Group
9