HYB314175BJ-50- Datasheet, PDF (2/24 Pages) Siemens Semiconductor Group – 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Ordering Information
Type
Ordering Code
HYB 314175BJ-50 Q67100 - Q2148
HYB 314175BJ-55 on request
HYB 314175BJ-60 Q67100 - Q2149
HYB 314175BJL-50 on request
HYB 314175BJL-55 on request
HYB 314175BJL-60 on request
Package
P-SOJ-40-1
P-SOJ-40-1
P-SOJ-40-1
P-SOJ-40-1
P-SOJ-40-1
P-SOJ-40-1
Description
3.3 V 50 ns 256 Kx16 EDO-DRAM
3.3 V 55 ns 256 Kx16 EDO-DRAM
3.3 V 60 ns 256 Kx16 EDO-DRAM
3.3 V 50 ns 256 Kx16 EDO- DRAM
3.3 V 55 ns 256 Kx16 EDO- DRAM
3.3 V 60 ns 256 Kx16 EDO-DRAM
Truth Table
RAS LCAS UCAS WE
OE
I/O1-I/O8
H
H
H
H
H
High-Z
I/O9-I/O16
High-Z
Operation
Standby
L
H
H
H
H
High-Z
High-Z
Refresh
L
L
H
H
L
Dout
High-Z
Lower byte read
L
H
L
H
L
High-Z
Dout
Upper byte read
L
L
L
H
L
Dout
Dout
Word read
L
L
H
L
H
Din
Don't care Lower byte write
L
H
L
L
H
Don't care Din
Upper byte write
L
L
L
L
H
Din
Din
Word write
L
L
L
H
H
High-Z
High-Z
Pin Names
A0-A8
RAS
UCAS, LCAS
WE
OE
I/O1 – I/O16
V_CC
V_SS
N.C.
Address Inputs
Row Address Strobe
Column Address Strobe
Read/Write Input
Output Enable
Data Input/Output
Power Supply (+ 3.3 V)
Ground (0 V)
No Connection
Semiconductor Group
2