HYB314175BJ-50- Datasheet, PDF (8/24 Pages) Siemens Semiconductor Group – 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min max min max min max
Output buffer turn-off delay from
t_OFF
CAS
0 13 0 13 0 15 ns 12
Output buffer turn-off delay from OE t_OEZ
Data to OE low delay
t_DZO
CAS high to data delay
t_CDD
OE high to data delay
t_ODD
0 13 0 13 0 15 ns 12
0 – 0 – 0 – ns 13
10 – 10 – 13 – ns 14
10 – 10 – 13 – ns 14
Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time t_RWL
Write command to CAS lead time t_CWL
Data setup time
t_DS
Data hold time
t_DH
Data to CAS low delay
t_DZC
8–
8–
0–
13 –
13 –
0–
8–
0–
8–
8–
0–
13 –
13 –
0–
8–
0–
10 –
10 –
0–
15 –
15 –
0–
10 –
0–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-modify-Write Cycle
Read-write cycle time
t_RWC
RAS to WE delay time
t_RWD
CAS to WE delay time
t_CWD
Column address to WE delay time t_AWD
OE command hold time
t_OEH
118 –
64 –
27 –
39 –
10 –
122 –
69 –
27 –
39 –
10 –
138 –
77 –
32 –
47 –
13 –
ns
ns 15
ns 15
ns 15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t_HPC
CAS precharge time
t_CP
Access time from CAS precharge t_CPA
Output data hold time
t_COH
RAS pulse width in hyper page
t_RAS
mode
RAS hold time from CAS precharge t_RHCP
20 – 20 – 25 – ns
8 – 8 – 10 – ns
– 27 – 27 – 32 ns 7
5 – 5 – 5 – ns
50 200k 55 200k 60 200k ns
27 – 27 – 32 – ns
Semiconductor Group
8