HYM368035S Datasheet, PDF (8/10 Pages) Siemens Semiconductor Group – 8M x 36-Bit EDO-DRAM Module

AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 ˚C, V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Early Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
CAS precharge time
Access time from CAS precharge
Output data hold time
RAS pulse width in hyper page mode
CAS precharge to RAS Delay
CAS before RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
HYM 368035S/GS-60
8M × 36-Bit EDO-Module
Symbol Limit Values Unit
-60
min. max.
Note
t_WCH
10
–
t_WP
10
–
t_WCS
0
–
t_RWL
15
–
t_CWL
15
–
t_DS
0
–
t_DH
10
–
ns
ns
ns
13
ns
ns
ns
14
ns
14
t_HPC
25
–
ns
t_CP
10
–
ns
t_CPA
–
32
ns
7
t_COH
5
–
ns
t_RAS
60
200k ns
t_RHCP
32
–
ns
t_CSR
10
–
ns
t_CHR
10
–
ns
t_RPC
5
–
ns
t_WRP
10
–
ns
t_WRH
10
–
ns
Semiconductor Group
8