HYM368035S Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – 8M x 36-Bit EDO-DRAM Module

8M × 36-Bit EDO-DRAM Module
HYM 368035S/GS-60
Advanced Information
• 8 388 608 words by 36-Bit organization in 2 banks
• Fast access and cycle time
60 ns RAS access time
15 ns CAS access time
104 ns cycle time
• Hyper page mode (EDO) capability
25 ns cycle time
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 7260 mW active
CMOS – 132 mW standby
TTL – 264 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 24 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height
• Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write parity applications
• Tin-Lead contact pads (HYM 368035S-60)
• Gold contact pads (HYM 368035GS-60)
Semiconductor Group
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