HYM368035S Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – 8M x 36-Bit EDO-DRAM Module

HYM 368035S/GS-60
8M × 36-Bit EDO-Module
DC Characteristics¹⁾ (cont’d)
Parameter
Average V_CC supply current
during hyper page mode (EDO)
(RAS = V_IL, CAS, address cycling,
t_HPC = t_HPC min)
-60 ns version
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
Average V_CC supply current
during CAS-before-RAS refresh mode
(RAS, CAS cycling, t_RC = t_RC min)
-60 ns version
Symbol
I_CC4
Limit Values
min.
max.
Unit Test
Condition
–
I_CC5
–
I_CC6
–
660
24
mA
2),3),4)
mA ¹⁾
1320
mA ^2),4)
Capacitance
T_A = 0 to 70 ˚C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10, WE)
Input capacitance (RAS0 - RAS3)
Input capacitance (CAS0 - CAS3)
I/O capacitance (DQ0-DQ35)
Symbol
C_I1
C_I2
C_I3
C_IO1
Limit Values
min.
max.
–
180
–
50
–
40
–
25
Unit
pF
pF
pF
pF
Semiconductor Group
6