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HYM368035S Datasheet, PDF (5/10 Pages) Siemens Semiconductor Group – 8M x 36-Bit EDO-DRAM Module | |||
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HYM 368035S/GS-60
8M Ã 36-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ËC
Storage temperature range......................................................................................... â 55 to 125 ËC
Input/output voltage ........................................................................ â 0.5 V to min (VCC + 0.5, 7.0) V
Power supply voltage...................................................................................................... â 1 to + 7 V
Power dissipation................................................................................................................... 9.24 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 ËC, VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = â 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-60 ns version
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
Limit Values
min.
max.
2.4
â 0.5
VCC + 0.5
0.8
2.4
â
â
0.4
â 80
80
Unit
V
V
V
V
µA
Test
Condition
1)
1)
1)
1)
1)
â 10
10
µA
1)
â
1320
mA
2),3),4)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
â
Average VCC supply current
ICC3
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-60 ns version
â
48
mA
1320
mA 2),4)
Semiconductor Group
5
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