HYM364025S Datasheet, PDF (8/10 Pages) Siemens Semiconductor Group – 4M x 36-Bit EDO - DRAM Module

HYM 364025S/GS-50/-60
4M × 36-Bit EDO-Module
AC Characteristics (contd’ ) ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Early Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
CAS precharge time
Access time from CAS precharge
Output data hold time
RAS pulse width in hyper page mode
CAS precharge to RAS Delay
CAS before RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
t_WCH
8
–
10
– ns
t_WP
8
–
10
– ns
t_WCS
0
–
0
– ns 13
t_RWL
13
–
15
– ns
t_CWL
13
–
15
– ns
t_DS
0
–
0
– ns 14
t_DH
8
–
10
– ns 14
t_HPC
t_CP
t_CPA
t_COH
t_RAS
t_RHCP
20
–
25
– ns
8
–
10
– ns
–
27
–
32 ns 7
5
–
5
– ns
50 200k 60 200k ns
27
–
32
– ns
t_CSR
10
–
10
– ns
t_CHR
10
–
10
– ns
t_RPC
5
–
5
– ns
t_WRP
10
–
10
– ns
t_WRH
10
–
10
– ns
Semiconductor Group
8