HYM364025S Datasheet, PDF (7/10 Pages) Siemens Semiconductor Group – 4M x 36-Bit EDO - DRAM Module

HYM 364025S/GS-50/-60
4M × 36-Bit EDO-Module
AC Characteristics ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
common parameters
Random read or write cycle time
t_RC
RAS precharge time
t_RP
RAS pulse width
t_RAS
CAS pulse width
t_CAS
Row address setup time
t_ASR
Row address hold time
t_RAH
Column address setup time
t_ASC
Column address hold time
t_CAH
RAS to CAS delay time
t_RCD
RAS to column address delay time
t_RAD
RAS hold time
t_RSH
CAS hold time
t_CSH
CAS to RAS precharge time
t_CRP
Transition time (rise and fall)
t_T
Refresh period
t_REF
Read Cycle
Access time from RAS
t_RAC
Access time from CAS
t_CAC
Access time from column address
t_AA
Column address to RAS lead time
t_RAL
Read command setup time
t_RCS
Read command hold time
t_RCH
Read command hold time referenced to
t_RRH
RAS
CAS to output in low-Z
t_CLZ
Output buffer turn-off delay
t_OFF
84
– 104 – ns
30
–
40
– ns
50 10k 60 10k ns
8 10k 10 10k ns
0
–
0
– ns
8
–
10
– ns
0
–
0
– ns
8
–
10
– ns
12 37 14 45 ns
10 25 12 30 ns
13
15
– ns
40
50
– ns
5
–
5
– ns
1
50
1
50 ns 7
–
32
–
32 ms
–
50
–
60 ns 8, 9
–
13
–
15 ns 8, 9
–
25
–
30 ns 8,10
25
–
30
– ns
0
–
0
– ns
0
–
0
– ns 11
0
–
0
– ns 11
0
–
0
– ns 8
0
13
0
15 ns 12
Semiconductor Group
7