HYM364025S Datasheet, PDF (5/10 Pages) Siemens Semiconductor Group – 4M x 36-Bit EDO - DRAM Module

HYM 364025S/GS-50/-60
4M × 36-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 8.7 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C, V_CC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
V_IH
Input low voltage
V_IL
Output high voltage (I_OUT = – 5 mA)
V_OH
Output low voltage (I_OUT = 4.2 mA)
V_OL
Input leakage current
I_I(L)
(0 V < V_IN < 6.5 V, all other pins = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 V < V_OUT < 5.5 V)
Average V_CC supply current
I_CC1
(RAS, CAS, address cycling, t_RC = t_RC min)
50 ns - Version
60 ns - Version
Limit Values
min.
max.
2.4 Vcc+0.5
– 0.5
0.8
2.4
–
–
0.4
– 20
20
Unit
V
V
V
V
µA
Test
Condition
1)
1)
1)
1)
1)
– 10
10
µA 1)
–
1240
mA ^{2) 3) 4)}
–
1120 mA
Standby V_CC supply current
I_CC2
(RAS = CAS = V_IH)
Average V_CC supply current
I_CC3
during RAS only refresh cycles
(RAS cycling, CAS = V_IH, t_RC = t_RC min)
50 ns - Version
60 ns - Version
–
16
mA
–
1240 mA ^{2) 4)}
–
1120 mA
Semiconductor Group
5