HYM364025S Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – 4M x 36-Bit EDO - DRAM Module

HYM 364025S/GS-50/-60
4M × 36-Bit EDO-Module
DC Characteristics¹⁾ (contd’ )
Parameter
Average V_CC supply current
during hyper page mode (EDO)
(RAS = V_IL, CAS, address cycling,
t_HPC = t_HPC min)
50 ns - Version
60 ns - Version
Symbol
I_CC4
Limit Values
min.
max.
–
840
–
680
Unit Test
Condition
mA ^{2) 3) 4)}
mA
Standby V_CC supply current
I_CC5
(RAS = CAS = V_CC – 0.2 V)
Average V_CC supply current
I_CC6
during CAS-before-RAS refresh mode
(RAS, CAS cycling, t_RC = t_RC min)
50 ns - Version
60 ns - Version
–
8
mA 1)
–
1240 mA ^{2) 4)}
–
1120 mA
Capacitance
T_A = 0 to 70 °C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10, WE)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0 - CAS3)
I/O capacitance
(DQ0-DQ7,DQ9-DQ16,DQ18-DQ25,DQ27-DQ34)
I/O capacitance (DQ8,DQ17,DQ26,DQ35)
Symbol
C_I1
C_I2
C_I3
C_IO1
Limit Values
min.
max.
–
75
–
45
–
25
–
15
C_IO2
–
25
Unit
pF
pF
pF
pF
pF
Semiconductor Group
6