HYM324020S-GS50 Datasheet, PDF (8/10 Pages) Siemens Semiconductor Group – 4M x 32-Bit Dynamic RAM Module

HYM 324020S/GS-50/-60
4M x 32-Bit
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 5 ns
Parameter
Early Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Symbol
Limit Values
Unit
-50
-60
min. max. min. max.
t_WCH
8
–
10 –
ns
t_WP
8
–
10 –
ns
t_WCS
0
–
0
–
ns
t_RWL
13
–
15 –
ns
t_CWL
13
–
15 –
ns
t_DS
0
–
0
–
ns
t_DH
10 –
10 –
ns
Note
13
14
14
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
t_PC
35 –
40 –
ns
t_CP
10 –
10 –
ns
t_CPA
–
30 –
35 ns 7
t_RAS
50 200k 60 200k ns
t_RHCP 30
–
35 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
t_CSR
10 –
10 –
ns
t_CHR
10
–
10 –
ns
t_RPC
5
–
5
–
ns
t_WRP
10
–
10 –
ns
t_WRH
10
–
10 –
ns
Semiconductor Group
8