HYM324020S-GS50 Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – 4M x 32-Bit Dynamic RAM Module

4M x 32-Bit Dynamic RAM Module
HYM 324020S/GS-50/-60
Advanced Information
• 4 194 304 words by 32-bit organization (alternative 8 388 608 words by 16-bit)
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 5280 mW active (HYM 324020S/GS-50)
max. 4840 mW active (HYM 324020S/GS-60)
CMOS – 44 mW standby
TTL –88 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 8 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module with 22.86 mm (900 mil) height
• Utilizes eight 4Mx4-DRAMs in 300mil wide SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
Semiconductor Group
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12.95