HYM324020S-GS50 Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – 4M x 32-Bit Dynamic RAM Module

HYM 324020S/GS-50/-60
4M x 32-Bit
DC Characteristics (cont’d)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 5 V ± 10 %; t_T = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
8
Average V_CC supply current, during CAS-
I_CC6
before-RAS refresh mode: -50 ns version
–
960
-60 ns version
–
880
(RAS, CAS cycling: t_RC = t_RC min.)
Unit Test
Condition
mA ¹⁾
mA ^{2) 4)}
mA ^{2) 4)}
Capacitance
T_A = 0 to 70 °C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10,WE)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0 - CAS3)
I/O capacitance
(DQ0-DQ31)
Symbol
C_I1
C_I2
C_I3
C_IO
Limit Values
min.
max.
–
75
–
45
–
25
–
15
Unit
pF
pF
pF
pF
Semiconductor Group
6