HYM321160S Datasheet, PDF (8/9 Pages) Siemens Semiconductor Group – 1M x 32-Bit Dynamic RAM Module

HYM 321160S/GS-60/-70
1M x 32-Bit
AC Characteristics (cont’d) ^{4) 5)}
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; t_T = 5 ns
Parameter
Symbol
Limit Values
HYM
321160S/GS-60
HYM
321160S/GS-70
min.
max.
min.
max.
Column address to RAS lead time t_RAL
30
–
Read command setup time
t_RCS
0
–
Read command hold time
t 8)
RCH
0
–
Read command hold time
t_RRH
0
–
ref. to RAS
8)
35
–
0
–
0
–
0
–
Write command hold time
t_WCH
10
–
15
–
Write command pulse width
t_WP
10
–
15
–
Write command to RAS lead time t_RWL
15
–
20
–
Write command to CAS lead time t_CWL
15
–
20
–
Data setup time
t 9 )
DS
0
–
0
–
Data hold time
t 9 )
DH
15
–
15
–
Refresh period
t_REF
–
16
–
16
Write command setup time
t 10)
WCS
0
–
0
–
CAS setup time
t 13)
CSR
5
–
5
–
CAS hold time
t 13)
CHR
15
–
15
–
RAS to CAS precharge time
t_RPC
0
–
0
–
CAS precharge time
t_CP
10
–
10
–
Write to RAS precharge time ¹³⁾ t_WRP
10
–
10
–
Write to time ref. to RAS
t 13)
WRH
10
–
10
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
.
Semiconductor Group
548