HYM321160S Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – 1M x 32-Bit Dynamic RAM Module

1M x 32-Bit Dynamic RAM Module
(2M x 16-Bit Dynamic RAM Module)
HYM 321160S/GS-60/-70
Advanced Information
• 1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 44 mW standby
TTL – 88 mW standby
• CAS-before-RAS refresh, RAS-only-refresh,
Hidden refresh
• 8 decoupling capacitors mounted on
substrate
• All inputs, outputs and clock fully TTL
compatible
• 72 pin Single in-Line Memory Module
• Utilizes eight 1M × 4-DRAMs in 300 mil SOJ
packages
• 1024 refresh cycles /16 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
• single sided module with 25.4 mm (1000 mil)
height
Ordering Information
Type
HYM 321160S-60
Ordering Code
Q67100-Q2010
HYM 321160S-70
on request
HYM 321160GS-60 Q67100-Q2009
HYM 321160GS-70 on request
Package
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
Descriptions
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
Semiconductor Group
541
09.94