HYM321160S Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – 1M x 32-Bit Dynamic RAM Module

HYM 321160S/GS-60/-70
1M x 32-Bit
DC Characteristics (cont’d) ¹⁾
Parameter
Symbol
Average V_CC supply current during fast
I_CC4
page mode:
-60 version
-70 version
Limit Values
min.
max.
–
560
–
560
(RAS = V_IL, CAS, address cycling
t_PC = t_PC min.)
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
8
Average V_CC supply current during
I_CC6
CAS-before-RAS refresh mode:
-60 version
–
880
-70 version
–
800
(RAS, CAS cycling, t_RC = t_RC min.)
Unit Test
Condition
2), 3)
mA
mA
mA –
1)
mA
mA
Capacitance
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0-CAS3)
Input capacitance (WE)
I/O capacitance (DQ0-DQ31)
Symbol
C_I1
C_I2
C_I3
C_I4
C_IO1
Limit Values
min.
max.
–
70
–
35
–
35
–
45
–
20
Unit
pF
pF
pF
pF
pF
Semiconductor Group
546