HYM321160S Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – 1M x 32-Bit Dynamic RAM Module

HYM 321160S/GS-60/-70
1M x 32-Bit
The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by
32-bit in a 72-pin single-in-line package comprising eight HYB 514400BJ 1M × 4 DRAMs in 300 mil
wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC
board.
The HYM 321160S/GS-60/-70 can also be used as a 2 097 152 words by 16-bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB 514400BJ is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 321160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
A0-A9
DQ0-DQ31
CAS0 - CAS3
RAS0, RAS2
WE
V_CC
V_SS
PD
N.C.
Function
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
Presence Detect Pins
PD0
PD1
PD2
PD3
-60
V_SS
V_SS
N.C.
N.C.
-70
V_SS
V_SS
V_SS
N.C.
Semiconductor Group
542