HYS64-72V2200GU-8 Datasheet, PDF (7/17 Pages) Siemens Semiconductor Group – 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
Standby and Refresh Currents (T_a = 0 to 70^oC, VCC = 3.3V ± 0.3V) ¹⁾
Parameter
Symbol
Test Condition
X64 X72
Note
max.
Operating Current
Icc1
Burst length = 4, CL=3
trc>=trc(min.),
tck>=tck(min.), Io=0 mA
2 bank interleave operation
800 900 mA 1,2
Precharged Standby Icc2P CKE<=VIL(max), tck>=tck(min.) 24 27 mA
Current in Power
Down Mode
Icc2PS CKE<=VIL(max), tck=infinite
16 18 mA
Precharged Standby Icc2N CKE>=VIH(min), tck>=tck (min.), 160
Current in Non-
input changed once in 3 cycles
power
Down Mode
Icc2NS CKE>=VIH(min), tck=infinite,
80
no input change
180 mA CS=
High
90 mA
Active Standby
Current in Power
Down Mode
Icc3P CKE<=VIL(max), tck>=tck(min.) 24 27 mA
Icc3PS CKE<=VIL(max), tck=infinite
16 18 mA
Active Standby
Current in Non-
power Down Mode
Icc3N CKE>=VIH(min), tck>=tck (min.) 200 225 mA CS=
input changed one time
High
Icc3NS CKE=>VIH(min),tck=infinite,
no input change
120 135 mA
Burst Operating
Current
Icc4 Burst length = full page,
trc = infinite, CL = 3,
tck>=tck (min.), Io = 0 mA
2 banks activated
Auto (CBR) Refresh
Current
Icc5 trc>=trc(min)
Self Refresh Current Icc6 CKE=<0,2V
760 855 mA 1,2
720 810 mA 1,2
16 18 mA 1,2
Semiconductor Group
7