HYS64-72V2200GU-8 Datasheet, PDF (1/17 Pages) Siemens Semiconductor Group – 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

3.3V 2M x 64/72-Bit 1 BANK SDRAM Module
3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64/72V2200GU-8/-10
HYS64/72V4220GU-8/-10
• 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules
for PC main memory applications
• 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTELs’ Rev. 1.0 module specification
• SDRAM Performance:
f_CK
Clock frequency (max.)
t_AC
Clock access time
• Programmed Latencies :
-8
-8-3
-10
100
100
66
6
6
8
Units
MHz
ns
Product Speed
CL
-8
PC100
2
-8-3
PC100
3
-10
PC66
2
tRCD
tRP
2
2
2
3
2
2
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E²PROM
• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
• 4096 refresh cycles every 64 ms
• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads
Semiconductor Group
1
6.98