HYM324025S Datasheet, PDF (7/10 Pages) Siemens Semiconductor Group – 4M x 32-Bit EDO-DRAM Module

HYM 324025S/GS-50/-60
4M x 32-Bit EDO-Module
AC Characteristics ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
common parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
Column address to RAS lead time
Read command setup time
Read command hold time
Read command hold time referenced to
RAS
CAS to output in low-Z
Output buffer turn-off delay
t_RC
84 –
104 –
ns
t_RP
30 –
40 –
ns
t_RAS
50
10k 60
10k ns
t_CAS
8
10k 10 10k ns
t_ASR
0
–
0
–
ns
t_RAH
8
–
10 –
ns
t_ASC
0
–
0
–
ns
t_CAH
8
–
10 –
ns
t_RCD
12
37
14
45
ns
t_RAD
10
25
12
30
ns
t_RSH
13
15 –
ns
t_CSH
40
50 –
ns
t_CRP
5
–
5
–
ns
t_T
1
50 1
50 ns 7
t_REF
–
32 –
32 ms
t_RAC
–
50 –
60 ns 8, 9
t_CAC
–
13 –
15 ns 8, 9
t_AA
–
25 –
30 ns 8,10
t_RAL
25
–
30 –
ns
t_RCS
0
–
0
–
ns
t_RCH
0
–
0
–
ns 11
t_RRH
0
–
0
–
ns 11
t_CLZ
0
t_OFF
0
–
0
13 0
–
ns 8
15 ns 12
Semiconductor Group
7