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HYM324025S Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – 4M x 32-Bit EDO-DRAM Module | |||
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4M x 32-Bit EDO-DRAM Module
HYM 324025S/GS-50/-60
⢠4 194 304 words by 32-bit organized SIMM modules
for PC main memory applications
⢠Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
⢠Hyper page mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
⢠Single + 5 V (± 10 %) supply
⢠Low power dissipation
max. 5280 mW active (HYM 324025S/GS-50)
max. 4840 mW active (HYM 324025S/GS-60)
CMOS â 44 mW standby
TTL â88 mW standby
⢠CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
⢠8 decoupling capacitors mounted on substrate
⢠All inputs, outputs and clocks fully TTL compatible
⢠72 pin Single in-Line Memory Module with 22.86 mm (900 mil) height
⢠Utilizes eight 4Mx4-DRAMs in 300mil wide SOJ packages
⢠2048 refresh cycles / 32 ms
⢠Optimized for use in byte-write non-parity applications
⢠Tin-Lead contact pads (S - version)
⢠Gold contact pads (GS - version)
Semiconductor Group
1
9.96
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