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HYM324025S Datasheet, PDF (5/10 Pages) Siemens Semiconductor Group – 4M x 32-Bit EDO-DRAM Module
HYM 324025S/GS-50/-60
4M x 32-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.72 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
II(L)
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
ICC1
(RAS, CAS, address cycling, tRC = tRC min)
50 ns - Version
60 ns - Version
Limit Values
min.
max.
2.4
Vcc+0.5
– 0.5
0.8
2.4
–
–
0.4
– 20
20
– 10
10
–
960
–
880
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
–
Average VCC supply current
ICC3
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
50 ns - Version
–
60 ns - Version
–
16
mA
960
mA 2) 4)
880
mA
DC Characteristics1) (contd’ )
Semiconductor Group
5