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HYM324025S Datasheet, PDF (6/10 Pages) Siemens Semiconductor Group – 4M x 32-Bit EDO-DRAM Module | |||
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HYM 324025S/GS-50/-60
4M x 32-Bit EDO-Module
Parameter
Average VCC supply current
during hyper page mode (EDO)
(RAS = VIL, CAS, address cycling,
tHPC = tHPC min)
50 ns - Version
60 ns - Version
Symbol
ICC4
Limit Values
min.
max.
â
560
â
440
Standby VCC supply current
(RAS = CAS = VCC â 0.2 V)
ICC5
â
8
Average VCC supply current
ICC6
during CAS-before-RAS refresh mode
(RAS, CAS cycling, tRC = tRC min)
50 ns - Version
60 ns - Version
â
960
â
880
Unit Test
Condition
mA 2) 3) 4)
mA
mA 1)
mA 2) 4)
mA
Capacitance
TA = 0 to 70 °C, VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10,WE)
Input capacitance (RAS0, RAS2)
Input capacitance (CAS0 - CAS3)
I/O capacitance
(DQ0-DQ31)
Symbol
CI1
CI2
CI3
CIO
Limit Values
min.
max.
â
75
â
45
â
25
â
15
Unit
pF
pF
pF
pF
Semiconductor Group
6
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