HYB5116165BSJ-50- Datasheet, PDF (7/26 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

HYB 5116(8)165BSJ-50/-60/-70
1M x 16-EDO DRAM
DC Characteristics( note : values in brackets for HYB5118165BSJ)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 5 V ± 10 %; t_T = 2 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Average V_CC supply current,
I_CC4
during hyper page mode: -50 ns version
–
-60 ns version
–
-70 ns version
–
(RAS = V_IL, CAS, address cycling:t_PC = t_PC min.)
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
Average V_CC supply current, during CAS-
I_CC6
before-RAS refresh mode: -50 ns version
–
-60 ns version
–
-70 ns version
–
(RAS, CAS cycling: t_RC = t_RC min.)
Average Self Refresh Current
I_CC7
_
70 (90) mA ^{2) 3) 4)}
55 (75) mA
45 (60) mA
1
mA ¹⁾
100(200) mA ^{2) 4)}
90 (180) mA
80 (160) mA
1
mA
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc - 0.2V or 0.2V)
Capacitance
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A11)
C_I1
Input capacitance (RAS, UCAS, LCAS, WE, OE) C_I2
I/O capacitance (I/O1-I/O16)
C_IO
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
7