HYB5116165BSJ-50- Datasheet, PDF (1/26 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

1M x 16-Bit Dynamic RAM
1k & 4k Refresh
(Hyper Page Mode- EDO)
HYB5116165BSJ -50/-60/-70
HYB5118165BSJ -50/-60/-70
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
84 104 124 ns
20 25 30 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 1100 active mW ( HYB5118165BSJ-50)
max. 990 active mW ( HYB5118165BSJ-60)
max. 880 active mW ( HYB5118165BSJ-70)
max. 550 active mW ( HYB5116165BSJ-50)
max. 495 active mW ( HYB5116165BSJ-60)
max. 440 active mW ( HYB5116165BSJ-70)
11 mW standby (TTL)
5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and Self Refresh
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 1024 refresh cycles / 16 ms for HYB5118165BSJ (1k-Refresh)
• 4096 refresh cycles / 64 ms for HYB5116165BSJ (4k-Refresh)
• Plastic Package:
P-SOJ-42-1 400 mil
Semiconductor Group
1
1.96