HYB5116165BSJ-50- Datasheet, PDF (2/26 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

HYB 5116(8)165BSJ-50/-60/-70
1M x 16-EDO DRAM
The HYB 5116(8)165BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16-bits. The
HYB 5116(8)165BSJ utilizes a submicron CMOS silicon gate process technology, as well as
advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 5116(8)165BSJ to be packaged in a standard
SOJ 42 plastic package with 400 mil width. These packages provide high system bit densities and
are compatible with commonly used automatic testing and insertion equipment. System-oriented
features include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic
device families such as Schottky TTL.
Ordering Information
Type
HYB 5116165BJ-50
HYB 5116165BJ-60
HYB 5116165BJ-70
HYB 5118165BJ-50
HYB 5118165BJ-60
HYB 5118165BJ-70
Ordering Code Package
on request
P-SOJ-42-1 400 mil
on request
P-SOJ-42-1 400 mil
on request
P-SOJ-42-1 400 mill
Q67100-Q1107 P-SOJ-42-1 400 mil
Q67100-Q1108 P-SOJ-42-1 400 mil
Q67100-Q1109 P-SOJ-42-1 400 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Pin Names
A0-A9
A0-A9
A0-A11
A0 to A7
RAS
OE
I/O1-I/O16
UCAS
LCAS
WE
V_CC
V_SS
N.C.
Row Address Inputs for HYB5118165BSJ
Column Address Inputs for HYB5118165BSJ
Row Address Inputs for HYB5116165BSJ
Column Address Inputs for HYB5116165BSJ
Row Address Strobe
Output Enable
Data Input/Output
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
Semiconductor Group
2