HYB5116165BSJ-50- Datasheet, PDF (10/26 Pages) Siemens Semiconductor Group – 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

HYB 5116(8)165BSJ-50/-60/-70
1M x 16-EDO DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
16E
T_A = 0 to 70 °C,V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read- t_PRWC 58 –
write cycle time
CAS precharge to WE
t_CPWD 41 –
68 –
49 –
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
CAS hold time
t_CHR
RAS to CAS precharge time
t_RPC
Write to RAS precharge time
t_WRP
Write hold time referenced to RAS t_WRH
10 –
10 –
5
–
10 –
10 –
10 –
10 –
5–
10 –
10 –
CAS-before-RAS Counter Test Cycle
CAS precharge time
t_CPT
35 –
40 –
Self Refresh Cycle
RAS pulse width
RAS precharge
CAS hold time
t_RASS
t_RPS
t_CHS
100k _
95 _
-50 _
100k _
110 _
-50 _
77 –
56 –
10 –
10 –
5
–
10 –
10 –
40 –
100k _
130 _
-50 _
ns
ns
ns
ns
ns
ns
ns
ns
ns 17
ns 17
ns 17
Semiconductor Group
10