HYB314405BJBJL-50- Datasheet, PDF (7/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

HYB 314405BJ/BJL-50/-60/-70
3.3V 1M x 4 EDO - DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 ˚C, V_CC = 3.3 V ± 0.3 V, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
t_RSH
13
15 –
17 –
ns
t_CSH
50
60 –
70 –
ns
t_CRP
5
t_T
1
–5
50 1
–
5
50 1
–
ns
50 ns 7
Refresh period
Refresh period for L-version
t_REF
–
16 –
16 –
16 ms
t_REF
–
128 –
128 –
128 ms
Read Cycle
Access time from RAS
t_RAC
Access time from CAS
t_CAC
Access time from column
t_AA
address
OE access time
t_OEA
Column address to RAS lead
t_RAL
time
Read command setup time
t_RCS
Read command hold time
t_RCH
Read command hold time
t_RRH
referenced to RAS
CAS to output in low-Z
t_CLZ
Output buffer turn-off delay
t_OFF
Output buffer turn-off delay from t_OEZ
OE
Data to CAS low delay
t_DZC
Data to OE low delay
t_DZO
CAS high to data delay
t_CDD
OE high to data delay
t_ODD
–
50 –
60 –
70 ns 8, 9
–
13 –
15 –
17 ns 8, 9
–
25 –
30 –
35 ns 8,10
–
13 –
15 –
17 ns
25 –
30 –
35 –
ns
0
–
0
–
0
–
ns
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 8
0
13 0
15 0
17 ns 12
0
13 0
15 0
17 ns 12
0
–
0
–
10 –
10 –
0
–
0
–
13 –
13 –
0
–
0
–
15 –
15 –
ns 13
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
Write command pulse width
t_WCH
8
–
10 –
10 –
ns
t_WP
8
–
10 –
10 –
ns
Semiconductor Group
7