CLY10 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET
CLY 10
_________________________________________________________________________________________________________
CLY10 Power GaAs-FET Matching Conditions
Definition:
Γ
Γ
Measured Data:
Typ
f
[GHz]
CLY10 0.9
1.5
1.8
2.4
VDS
[V]
3
5
6
3
5
6
3
5
6
3
5
6
ID
[mA]
700
700
700
700
700
700
700
700
700
700
700
700
P-1dB
[dBm]
26.7
32.0
33.8
28.5
32.5
33.3
28.5
32.5
33.3
27.9
31.3
33.3
Gain
[dB]
15.3
15.4
14.9
10.0
10.1
10.2
9.0
9.5
9.7
7.2
7.4
7.5
Note: Gain is small signal gain @ Γ_ms and Γ_ml
Γ_ms
MAG
0.58
0.57
0.56
0.70
0.67
0.67
0.70
0.70
0.73
0.77
0.74
0.73
Γ_ms
ANG
169
173
174
-135
-127
-134
-120
-120
-125
-86
-92
-87
Γ_ml
MAG
0.68
0.69
0.68
0.79
0.76
0.72
0.78
0.78
0.77
0.73
0.65
0.70
Γ_ml
ANG
-156
-157
-155
-132
-133
-132
-123
-125
-126
-107
-110
-110
Siemens Aktiengesellschaft
pg. 7/7
17.12.96
HL EH PD 21