CLY10 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET
CLY 10
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Datasheet
* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Wide operating voltage range: 2.7 to 6 V
* P_OUT at V_D=3V, f=1.8GHz 28.5 dBm typ.
* High efficiency better 55 %
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CLY 10
Marking
CLY 10
Ordering code
(taped)
Pin Configuration
1
2
34
Q62702-L94
G
S
D
S
Package 1)
SOT 223
Maximum ratings
Symbol
Values
Unit
Drain-source voltage
V_DS
9
V
Drain-gate voltage
V_DG
12
V
Gate-source voltage
V_GS
-6
V
Drain current
I_D
2.1
A
Channel temperature
T_Ch
150
°C
Storage temperature
T_stg
-55...+150
°C
Total power dissipation (Ts < 80 °C) ²⁾
P_totDC
3.5
W
Total power dissipation (Ts < 110 °C) ²⁾
2.0
Thermal resistance
Channel - soldering point ²⁾
R_thChS
≤20
1) Dimensions see chapter Package Outlines
2) Ts is measured on the source lead to the PCB under load.
Siemens Aktiengesellschaft
pg. 1/7
K/W
17.12.96
HL EH PD 21