CLY10 Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET
CLY 10
_________________________________________________________________________________________________________
P1dB
40
[dBm]
35
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS = 0.5 IDSS
η_D
Small Signal Gain
80
16
[%]
[dB]
70
14
P1dB
4.0
[W]
3.5
30
60
12
3.0
25
50
10
2.5
20
40
8
2.0
15
30
6
1.5
10
20
4
1.0
5
10
2
0.5
0
0
0 1 2 3 4 5 6 7[V] 8
Drain-Source Voltage
0
0
0 1 2 3 4 5 6 7[V] 8
Drain-Source Voltage
1,8
1,6
1,4
1,2
1
0,8
0,6
0,4
0,2
0
0
Output Characteristics
PtotDC
1
2
3
4
Drain-Source Voltage [V]
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-1.5V
VGS=-2V
VGS=-2.5V
5
6
Siemens Aktiengesellschaft
pg. 3/7
17.12.96
HL EH PD 21