CLY10 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET
CLY 10
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Electrical characteristics (T_A = 25°C , unless otherwise specified)
Characteristics
Symbol min
typ
max Unit
Drain-source saturation current
I_DSS
1.2
1.6
2.4
A
V_DS = 3 V V_GS = 0 V
Drain-source pinch-off current
I_D
-
-
200
µA
V_DS = 3 V V_GS = -3.8 V
Gate pinch-off current
I_G
-
10
35
µA
V_DS = 3 V V_GS = -3.8 V
Pinch-off Voltage
VGS(p) -3.8
-2.8
-1.8
V
V_DS= 3 V I_D=200µA
Small Signal Gain ^*)
G
dB
V_DS = 3 V I_D = 700 mA f = 1.8 GHz
-
9
-
Pin = 0 dBm
Small Signal Gain ^**)
G
dB
V_DS = 3 V I_D = 700 mA f = 1.8 GHz
-
8
-
Pin = 0 dBm
Output Power
P_o
28
28.5
-
dBm
V_DS = 3 V I_D = 700 mA f = 1.8 GHz
Pin = 20.5 dBm
Output Power
P_o
32.0 32.5
-
dBm
V_DS = 5 V I_D = 700 mA f = 0.9 GHz
Pin = 20 dBm
1dB-Compression Point
P_1dB
-
28.5
-
dBm
V_DS = 3 V I_D = 700 mA f = 1.8 GHz
1dB-Compression Point
P_1dB
-
32.5
-
dBm
V_DS = 5 V I_D = 700 mA f = 1.8GHz
Power Added Efficiency
PAE
40
55
-
%
V_DS = 5 V I_D = 700 mA f = 1.8 GHz
Pin = 20 dBm
*_{) Matching conditions for maximum small signal gain: f = 1.8 GHz}
Source Match: Γ_ms: MAG = 0.70, ANG -116°; Load Match: Γ_ml: ;MAG 0.68, ANG -145°
**_{) Power matching conditions: f = 1.8 GHz}
Source Match: Γ_ms: MAG = 0.70, ANG -120°; Load Match: Γ_ml: ;MAG 0.78, ANG -130°
Siemens Aktiengesellschaft
pg. 2/7
17.12.96
HL EH PD 21