BFP136W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

BFP 136W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=80mA
dB
G
14
12
10
8
6
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
0.9GHz
1.8GHz
0.9GHz
V
12
V_CE
V_CE = Parameter
34
dB ^IC=80mA
28
G
24
20
16
12
8
10V
1V
4
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
40
8V
dBm
5V
IP₃
30
3V
25
2V
20
1V
15
10
0 20 40 60 80 100 120 mA 160
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
dB ^IC=80mA
24
G
20
16
12
8
4
0
10V
2V
-4
1V
0.7V
-8
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
7
Jan-20-1997