BFP136W Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• f_T = 5.5GHz
• Gold metalization for high reliability
BFP 136W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 136W PAs
Q62702-F1575
1=E 2=C 3=E 4=B
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 60 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
1) T_S is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
150
20
1000
150
- 65 ... + 150
- 65 ... + 150
≤ 90
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Jan-20-1997