BFP136W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

BFP 136W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
3.0
pF
C_cb
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 11
V_R
Transition frequency f_T = f (I_C)
V_CE = Parameter
7.0
GHz
6.0
f_{T 5.5}
5.0
8V
5V
3V
2V
4.5
4.0
1V
3.5
3.0
0.7V
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140 mA 170
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
18
dB
G
14
12
10
8
10V
3V
2V
1V
0.7V
6
4
2
0
0 20 40 60 80 100 120 140 mA 170
I_C
12
dB
10
G
9
8
10V
3V
2V
7
6
1V
5
4
0.7V
3
2
1
0
0 20 40 60 80 100 120 140 mA 170
I_C
Semiconductor Group
6
Jan-20-1997