BFP136W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

BFP 136W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.5813 fA
BF =
113.32 -
VAF = 12.331 V
IKF =
1.4907 A
NE =
1.4254 -
BR = 86.717 -
VAR = 31.901 V
IKR = 0.033605 A
NC = 1.8821 -
RB =
0
Ω
RBM = 1.0078 Ω
RE =
0.22081 Ω
CJE = 33.904 fF
VJE = 0.71518 V
TF =
20.691 ps
XTF = 0.31338 -
ITF =
4.5579 mA PTF = 0
deg
VJC = 1.1381 V
MJC = 0.31461 -
TR =
1.0033 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC =
0.99886 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.0653 -
46.37
fA
1.8047 -
0.0080864 fA
0.83992 mA
0.01636 Ω
0.36824 -
0.10174 V
2977.4 fF
0.02899 -
0.75
V
1.11
eV
300
K
Package Equivalent Circuit:
LBI =
0.5
nH
LBO = 0.51
nH
LEI =
0.18
nH
LEO = 0.14
nH
LCI =
0.05
nH
LCO = 0.35
nH
CBE = 78
fF
CCB = 48
fF
CCE = 244
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Jan-20-1997