HYS64V2100G Datasheet, PDF (6/12 Pages) Siemens Semiconductor Group – 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

HYS64(72)V2100G(C)U-10
2M x 64/72 SDRAM-Module
Standby and Refresh Currents (T_a = 0 to 70^oC, VCC = 3.3V ± 0.3V)
Parameter
Symbol
Test Condition
X64
Operating Current
Icc1 Burst length = 4, CL=3
800
trc>=trc(min.),
tck>=tck(min.), Io=0 mA
2 bank interleave operation
Precharged Standby Icc2P CKE<=VIL(max), tck>=tck(min.) 24
Current in Power
Icc2PS CKE<=VIL(max), tck=infinite
16
Down Mode
Precharged Standby Icc2N CKE>=VIH(min), tck>=tck (min.), 160
Current in Non-
input changed once in 3 cycles
power
Down Mode
Icc2NS CKE>=VIH(min), tck=infinite,
80
no input change
Active Standby
Current in Power
Down Mode
Icc3P CKE<=VIL(max), tck>=tck(min.) 24
Icc3PS CKE<=VIL(max), tck=infinite
16
Active Standby
Current in Non-
power Down Mode
Icc3N CKE>=VIH(min), tck>=tck (min.) 200
input changed one time
Icc3NS CKE=>VIH(min),tck=infinite,
120
no input change
Burst Operating
Current
Icc4 Burst length = full page,
760
trc = infinite, CL = 3,
tck>=tck (min.), Io = 0 mA
2 banks activated
Auto (CBR) Refresh Icc5 trc>=trc(min)
720
Current
Note
X72
900 mA 1,2
mA
27 mA
18 mA
180 mA CS=
High
90 mA
27 mA
18 mA
225 mA CS=
High
135 mA
855 mA 1,2
mA
810 mA 1,2
mA
Self Refresh Current Icc6 CKE=<0,2V
16
18 mA 1,2
Semiconductor Group
6