HYS64V2100G Datasheet, PDF (5/12 Pages) Siemens Semiconductor Group – 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

HYS64(72)V2100G(C)U-10
2M x 64/72 SDRAM-Module
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V V _{DD, DDQ} = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 2.0 mA)
Output low voltage (I_OUT = 2.0 mA)
Input leakage current, any input
(0 V < V_IN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < V_OUT < V_CC)
Symbol
V_IH
V_IL
V_OH
V_OL
I_I(L)
I_O(L)
Limit Values
Unit
min.
max.
2.0
Vcc+0.3 V
– 0.5
0.8 V
2.4
–
V
–
0.4 V
– 40
40 µA
– 40
40 µA
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A10, BS, RAS, CAS, WE)
C_I1
Input capacitance ( CS0 - CS3)
C_I2
Input capacitance (CLK0 - CLK3)
C_I3
Input capacitance (DQMB0 - DQMB7)
C_I4
Input / Output capacitance (DQ0-DQ63,CB0-CB7) C_IO
Input Capacitance (SCL,SA0-2)
C_sc
Input/Output Capacitance
C_sd
Limit Values
Unit
min.
(x64)
max.
(x72)
45
55 pF
20
25 pF
22
38 pF
13
13 pF
12
12 pF
8
8
pF
10
10 pF
Semiconductor Group
5