HYB39S16160CT-6 Datasheet, PDF (6/15 Pages) Siemens Semiconductor Group – 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications

HYB39S16160CT-6/-7
16MBit Synchronous DRAM
Address Input for Mode Set (Mode Register Operation)
BS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus (Ax)
Operation Mode
CAS Latency BT Burst Length Mode Register (Mx)
Operation Mode
M11 M10 M9 M8 M7
Mode
0 0 000
Normal
Multiple Burst
X X 1 0 0 with Single
Write
CAS Latency
M6 M5 M4
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Latency
Reserve
1
2
3
Reserve
Reserve
Reserve
Reserve
Sequential Burst Addressing
01234567
12345670
23456701
34567012
45670123
56701234
67012345
70123456
Burst Type
M3
Type
0
Sequential
1
Interleave
Burst Length
Length
M2 M1 M0
Sequential Interleave
0
0
0
1
1
0
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
Reserve Reserve
1
0
1
Reserve Reserve
1
1
0
Reserve Reserve
1
1
1 Full Page*) Reserve
*) optional
Interleave Burst Addressing
01234567
10325476
23016745
32107654
45670123
54761032
67452301
76543210
Semiconductor Group
6