HYB39S16160CT-6 Datasheet, PDF (4/15 Pages) Siemens Semiconductor Group – 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications

HYB39S16160CT-6/-7
16MBit Synchronous DRAM
CKE CKE Buffer
CLK
CLK Buffer
Self
Refresh Clock
Row
Address
Counter
A0
A1
A2
A3
12
A4
A5
A6
A7
A8
12
A9
A10
A11 (BS)
CS
CS Buffer
RAS RAS Buffer
CAS CAS Buffer
2048
2048 x 512
Memor2y0B4a8nxk2A56
Memory Bank A
Bank A
Row/Column
Select
11 ^{Predecode A}
3
Sense Amplifiers
16
Sense Amplifiers
Sense Amplifiers
Column DecoSdeenrsaendAmDpQlifGiearste
Column Decoder and DQ Gate
Column Decoder and DQ Gate
Column Decoder and DQ Gate
16
Sequential
Control
Bank A
16
8
8
8
Data Latches ⁸
Data Latches
Data Latches
Data Latches
8
11 ^{Mode Register}
8
Sequential
Control
3 _{Bank B}
16
11 Predecode B
Data Latches
Data Latches
8
Bank B
Row/Column
Select
16
16
Column Decoder and DQ Gate
Column DeSceodnseer aAnmdpDliQfieGrsate
Sense Amplifiers
16
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
WE
WE Buffer
UDQM ^{DQM Buffer}
LDQM ^{DQM Buffer}
2048
Memory Bank B
MMemeM2mo02er4o0myr842Byo80xraB4yxn5a8Bk11nxa20Bkn22Bk456B
2048 x 1024
Block Diagram for HYB39S16160CT (2 banks x 512k x 16 SDRAM)
Semiconductor Group
4