HYB39S16160CT-6 Datasheet, PDF (5/15 Pages) Siemens Semiconductor Group – 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications

HYB39S16160CT-6/-7
16MBit Synchronous DRAM
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the most important operation commands.
Operation
Standby, Ignore RAS, CAS, WE and Address
Row Address Strobe and Activating a Bank
Column Address Strobe and Read Command
Column Address Strobe and Write Command
Precharge Command
Burst Stop Command
Self Refresh Entry
Mode Register Set Command
Write Enable/Output Enable
Write Inhibit/Output Disable
No Operation (NOP)
CS RAS CAS WE (L/U)DQM
H
X
X
X
X
L
L
H
H
X
L
H
L
H
X
L
H
L
L
X
L
L
H
L
X
L
H
H
L
X
L
L
L
H
X
L
L
L
L
X
X
X
X
X
L
X
X
X
X
H
L
H
H
H
X
Mode Register
For application flexibility, a CAS latency, a burst length, and a burst sequence can be
programmed in the SDRAM mode register. The mode set operation must be done before any
activate command after the initial power up. Any content of the mode register can be altered by re-
executing the mode set command. Both banks must be in precharged state and CKE must be high
at least one clock before the mode set operation. After the mode register is set, a Standby or NOP
command is required. Low signals of RAS, CAS, and WE at the positive edge of the clock activate
the mode set operation. Address input data at this timing defines parameters to be set as shown in
the following table.
Semiconductor Group
5