HYB39S16160CT-6 Datasheet, PDF (12/15 Pages) Siemens Semiconductor Group – 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications

HYB39S16160CT-6/-7
16MBit Synchronous DRAM
AC Characteristics 1)2)3)
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 3.3 V ± 0.3 V, t_T = 1 ns
Parameter
Symbol
Limit Values
Unit
-6
min max
-7
min max
Clock and Clock Enable
Clock Cycle Time
CAS Latency = 3 t_CK
CAS Latency = 2
Clock Frequency
CAS Latency = 3 _tCK
CAS Latency = 2
Access Time from Clock
CAS Latency = 3 t_AC
CAS Latency = 2
Clock High Pulse Width
t_CH
Clock Low Pulse Width
t_CL
Transition time
t_T
Setup and Hold Times
Input Setup Time
t_IS
Input Hold Time
t_IH
CKE Setup Time
t_CKS
CKE Hold Time
t_CKH
Mode Register Set-up time
t_RSC
Power Down Mode Entry Time
t_SB
Common Parameters
Row to Column Delay Time
t_RCD
Row Precharge Time
t_RP
Row Active Time
t_RAS
Row Cycle Time
t_RC
Activate(a) to Activate(b) Command t_RRD
period
CAS(a) to CAS(b) Command period t_CCD
6
–
7
– ns
8
–
9
– ns
– 166 – 143 MHz
– 125 – 115 MHz
–
5
–
5 ns 2,
–
6
–
6 ns ⁴
2
–
2.5
– ns
2
–
2.5
– ns
0.5 10 0.5 10 ns
2
–
2
– ns 5
1
–
1
– ns 5
2
–
2
– ns 5
1
–
1
– ns 5
12
–
24
– ns
0
6
0
7 ns
16
–
18
– ns
16
–
18
– ns
36 100k 42 100k ns
54
–
63
– ns
12
–
14
– ns
1
–
1
– CLK
Semiconductor Group
12