HYB3116400BJBTL-50- Datasheet, PDF (6/26 Pages) Siemens Semiconductor Group – 3.3V 4M x 4-Bit Dynamic RAM

HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 ° C
Input/output voltage ................................................................................-0.5 to min(Vcc+0.5, 4.6) V
Power supply voltage.................................................................................................- 0.5 V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics (values in brackets for HYB3117400)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V, t_T = 5 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
Input low voltage
TTL Output high voltage (I_OUT = – 2 mA)
TTL Output low voltage (I_OUT = 2 mA)
V_IH
2.0
Vcc+0.5 V ¹⁾
V_IL
– 0.5 0.8
V
1)
V_OH
2.4
–
V
1)
V_OL
–
0.4
V
1)
CMOS Output high voltage (I_OUT = –100 uA) V_OH
VCC-0.2 –
V
CMOS Output low voltage (I_OUT = 100 uA)
V_OL
–
0.2
Input leakage current
I_I(L)
(0 V ≤ V_IH ≤ Vcc + 0.3V, all other pins = 0 V)
– 10
10
Output leakage current
(DO is disabled, 0 V ≤ V_OUT ≤ Vcc + 0.3V)
I_O(L)
– 10
10
V
µA ¹⁾
µA ¹⁾
Average V_CC supply current:
I_CC1
-50 ns version
–
-60 ns version
–
-70 ns version
–
100(120) mA
90 (110) mA
80 (100) mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
(RAS, CAS, address cycling, t_RC = t_RC min.)
Standby V_CC supply current (RAS = CAS = V_IH) I_CC2
–
2
mA –
Semiconductor Group
6