HYB3116400BJBTL-50- Datasheet, PDF (3/26 Pages) Siemens Semiconductor Group – 3.3V 4M x 4-Bit Dynamic RAM

HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Vcc 1
I/O1 2
I/O2 3
WE 4
RAS 5
N.C. 6
26 Vss Vcc 1
25 I/O4 I/O1 2
24 I/O3 I/O2 3
23 CAS WE 4
22 OE RAS 5
21 A9 A11 6
26 Vss
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
A10 8
A0 9
A1 10
A2 11
A3 12
VCC 13
19 A8
18 A7
17 A6
16 A5
15 A4
14 Vss
HYB3117400BJ/BT
A10 8
A0 9
A1 10
A2 11
A3 12
VCC 13
19 A8
18 A7
17 A6
16 A5
15 A4
14 Vss
HYB3116400BJ/BT
P-SOJ-26/24-1 (300mil)
P-TSOPII-26/24-1 (300mil)
Pin Configuration
Pin Names
A0 to A10
A0 to A11
A0 to A9
RAS
OE
I/O1 -I/O4
CAS
WE
V_CC
V_SS
N.C.
Row & Column Address Inputs for HYB3117400
Row Address Inputs for HYB3116400
Column Address Inputs for HYB3116400
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
Semiconductor Group
3