HYB3116400BJBTL-50- Datasheet, PDF (10/26 Pages) Siemens Semiconductor Group – 3.3V 4M x 4-Bit Dynamic RAM

HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
16F
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3 V, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
CAS precharge to RAS Delay
t_RHPC 30 –
35 –
40 –
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle t_PRWC 71 –
80 –
95 –
ns
time
CAS precharge to WE
t_CPWD 48 –
55 –
65 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
10 –
10 –
10 –
ns
CAS hold time
t_CHR
10 –
10 –
10 –
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
5
–
ns
Write to RAS precharge time
t_WRP
10 –
10 –
10 –
ns
Write hold time referenced to RAS t_WRH 10 –
10 –
10 –
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t_CPT
35 –
40 –
40 –
ns
Test Mode
CAS hold time
Write command setup time
Write command hold time
t_CHRT
30
–
30 –
30 –
ns
t_WTS
10 –
10 –
10 –
ns
t_WTH
10 –
10 –
10 –
ns
Self Refresh Cycle
RAS pulse width
RAS precharge time
CAS hold time
t_RASS
t_RPS
t_CHS
100k _
95 _
-50 _
100k _
110 _
-50 _
100k _
130 _
-50 _
ns 17
ns 17
ns 17
Semiconductor Group
10