BFR180W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR 180W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.5
C_cb ^pF
0.3
0.2
0.1
0.0
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 11
V_R
18
10V
dB
3V
2V
16
G
15
14
13
1V
12
11
0.7V
10
9
8
7
6
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
5
4
3
2
10V
8V
5V
3V
2V
1V
0.7V
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
15
dB
13
10V
G 12
5V
11
3V
10
2V
9
8
7
1V
6
5
0.7V
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0
I_C
Semiconductor Group
6
Dec-11-1996