BFR180W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR 180W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
AC Characteristics
Transition frequency
I_C = 3 mA, V_CE = 5 V, f = 500 MHz
Collector-base capacitance
V_CB = 5 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 5 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 1 mA, V_CE = 5 V, Z_S = Z_Sopt
f = 900 MHz
f = 1.8 GHz
Power gain ¹⁾
I_C = 1 mA, V_CE = 5 V, Z_S = Z_Sopt
Z_L = Z_Lopt
f = 900 MHz
f = 1.8 GHz
Transducer gain
I_C = 1 mA, V_CE = 5 V, Z_S =Z_L= 50 Ω
f = 900 MHz
f = 1.8 GHz
f_T
5
C_cb
-
C_ce
-
C_eb
-
F
-
-
G_ms
-
-
|S_21e|²
-
-
7
0.3
0.22
0.1
2.1
2.25
13.5
10.5
8.5
6
max.
-
0.45
-
-
-
-
-
-
-
-
1) G_ms = |S₂₁/S₁₂|
Unit
GHz
pF
dB
Semiconductor Group
3
Dec-11-1996